TTC5200 NPN Transistor
RWF 2,500
Product Description
The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification.
Specifications
Specifications
- Collector to emitter voltage (Vce) is 230V
- Collector to base voltage of 230V
- Collector current (Ic) is 15A
- Power dissipation (pd) is 150W
- Junction temperature of 150�C
- Current gain of 35 at 7A collector current
- Collector to emitter saturation voltage of 3V
- Collector to emitter breakdown voltage of 230V
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