MMBT5401 PNP SMD High voltage Transistor SOT-23
RWF 300
Product Description
PNP Epitaxial Silicon Transistor. This device is designed as a general-purpose amplifier and switch for applications requiring high voltage. PNP General-Purpose Amplifier �
Specifications
Specifications
- Current collector (Max):600 mA
- Voltage collector Emitter Breakdown(Max):15V
- Vce Saturation (Max)@ Ib,Ic:500mV,50mA
- Current-collector cutoff(Max):50nA(ICBO)
- DC Current Gain(hEE)(min)A IC,Vce:60@10mA,5v
- Power Max:350 mW
- Frequency Transition:300 MHz
- Operating Temperature:--55�C-150�C (TJ)
- Mounting Type: Surface Mount
- Supplier device Package:SOT-23-3
Related Products
TIP122 - Darlington NPN Transi...
RWF 1,000
TIP147 Transistor
RWF 500
2N2222A NPN Transistor
RWF 300