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MMBT5401 PNP SMD High voltage Transistor SOT-23

RWF 300


Product Description

PNP Epitaxial Silicon Transistor. This device is designed as a general-purpose amplifier and switch for applications requiring high voltage. PNP General-Purpose Amplifier �

Specifications

  • Current collector (Max):600 mA

  • Voltage collector Emitter Breakdown(Max):15V

  • Vce Saturation (Max)@ Ib,Ic:500mV,50mA

  • Current-collector cutoff(Max):50nA(ICBO)

  • DC Current Gain(hEE)(min)A IC,Vce:60@10mA,5v

  • Power Max:350 mW

  • Frequency Transition:300 MHz

  • Operating Temperature:--55�C-150�C (TJ)

  • Mounting Type: Surface Mount

  • Supplier device Package:SOT-23-3

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