IRF5801
RWF 1,000
Type Designator: IRF5801
Type of Transistor: MOSFET
Product Description
Type Designator: IRF5801
Type of Transistor: MOSFET
Specifications
Type of Transistor: MOSFET
Specifications
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: �30 V
- Drain-Source On-State Resistance, max: 999.999 Ohm
- Continuous Drain Current: 0.6 A
- Total Gate Charge: 3.9 nC
- Power Dissipation: 2 W
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