IRF5620
RWF 1,000
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area
Product Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area
Specifications
Specifications
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: �20 V
- Drain-Source On-State Resistance, max: 77.500 Ohm
- Continuous Drain Current: 24 A
- Total Gate Charge: 25 nC
- Power Dissipation: 144 W
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