IRF2807 MOSFET - 75V 82A N-Channel HEXFET Power MOSFET
RWF 1,000
IRF2807 is Advanced Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area
Product Description
IRF2807 is Advanced Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area
Specifications
Specifications
- Drain-to-Source Breakdown Voltage: 75 V.
- Gate-to-Source Voltage, max: �20 V.
- Drain-Source On-State Resistance, max: 13.000 Ohm.
- Continuous Drain Current: 82 A.
- Total Gate Charge: 106.7 nC.
- Power Dissipation: 200 W.
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