3DU5C Phototransistor
RWF 900
Product Description
The phototransistor is useful for building infrared sensors that can detect white or black.
The operation of these sensors is based on the emission of IR light by an LED and its mirroring or absorption by white or black surfaces.
This is a metal encapsulated silicon phototransistor for applications that require light sensing.
Specifications
The operation of these sensors is based on the emission of IR light by an LED and its mirroring or absorption by white or black surfaces.
This is a metal encapsulated silicon phototransistor for applications that require light sensing.
Specifications
- Model: 3DU5C
- Material: Silicon tube
- Structure: NPN
- Maximum operating voltage: 10V;
- Current with closed transistor: 0 .3uA;
- Current with open transistor: 0.5mA - 1mA;
- Power: 30mW;
- Length of wave: 880nm (IR).
Related Products
TIP122 - Darlington NPN Transi...
RWF 1,000
TIP147 Transistor
RWF 500
2N2222A NPN Transistor
RWF 300